Al particles were implanted into Ag substrate by
plasma based ion implantation with Al plasma (AIPBII). The depth profile
and chemical state of Al in
implantation layer were acquired by XPS. The phase composition of Al implantation layer and that of Al deposition layer by unbalance magnetron sputtering (UBMS) were determined and compared. The glanced X-ray distraction method (GXRD) was used to analysis the phase in the implantation layer in detail. The results showed the Al concentration along depth direction decreases gradually. Ag atoms can be found in the surface layer of implantation sample. The Ag-Al solid solution and a few μ-Ag3Al phase exist in this surface layer. In the deep layer of implanted sample aluminum oxide was found and coexists with Ag-Al solid solution and μ-Ag3Al. The Ag-Al solid solution disappears at the deeper layer when the Al concentration decreased rapidly, and μ-Ag3Al coexists with aluminum oxide. Ag3AI phase has β-Mn complex cubic structure and the Al concentration in Ag3AI phase fluctuates in a large range. No Ag3AI phase was found in the deposition layer of Al.