Metallographic Study on the Cross-sectional Morphology of Diamond Film-Substrate Article Abstract
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Published: December 22, 1998
The cross-sectional morphologies of chemical vapor deposited diamond thin films synthesized onto the cobalt cemented tungsten carbide(YG8) substrate using various methane concentrations by D . C . plasma jet CVD method have been observed by means of MeF3 optical microscope with high resolution . The effect of methane concentration on the cross-sectional microstructure layers was mainly investigated . The results show that the surface microstructures of cemented carbide substrate aremodified significantly and there are various microstructure layers on the cross-section . Typical cross-sectional morphology of diamond film-cemented carbide substrate formed on the basis of pretreatment processes such as chemically cobalt-removed and plasma-etch decarbonizing treatments is as follows : diamond thin film , graphite or free carbon thin film , small WC grains layer , retained decarbonized layer (W and η phases ), residual porous layer , YG8 cemented carbide substrate. Methane concentration has aobvious influence on the formation and thickness of above-mentioned layers .