Bismuth-doped zinc oxide thin films were
prepared by sol-gel dip-coating method onto pre-cleaned glass substrate. The sol
was
prepared from an ethanolic solution using zinc acetate dehydrate by dissolving into 2-methoxyethanol and diethanolamine as a stabilizer and doped with concentrated of bismuth (III) nitrate. Mixture solution was stirred for 4 hours and deposition was performed by dipping glass substrate slowly into sol at room temperature. Deposited films were annealed in air at 400° C for two hours. Five different bath solution with bismuth
concentration of 0 to 8% have been prepared to investigates the electrical properties of bismuth-doped ZnO thin films. The result shows that thickness of film was slightly increase with increasing of bismuth concentration. The thin films resistivities were measured by van der Pauw method and shows that the lower resistivity obtained for sample doped with 4% bismuth concentration.