Low dimensional silicon nanowires (SiNWs) have captured considerable attention recently due to its promising application
in electronic device miniaturization. Among the many routes for synthesizing silicon nanowires,
carbothermal evaporation is the method of interest due to its simple and inexpensive procedures. The SiNWs were prepared by using carbothermal method. A powder mixture of silicon and activated carbon was heated in argon flow atmosphere at high
temperature up to 1100oC. The evaporated powders were formed SiNWs on the surface of silicon wafer by controlling of heating rate, temperature, time, and substrate position and location. The FESEM and EDAX results show that SiNWs were grown radially outward from the deposited particle and silicon nanospheres were found to coexist with SiNWs when the heating temperature as low as 1000°C. However, a sheath of an oxide layer covered the fabricated nanowires and nanospheres.