Aluminum doped Zinc Oxide films were deposited on glass slide by rf magnetron sputtering using a ZnO target mixed with Al2O3.
All the films were growth in room temperature without intentional heating. The resistivity of the ZnO:Al films were measured using Van der Pauw method in terms of the preparation conditions such as rf power, working pressure, deposition time, O2 partial pressure and target-substrate distance. Sheet resistance of the deposited films shows the following behaviors:
decreases with the
increasing RF power, film thickness while increase with increasing target substrate distance, and O2 partial pressure. Sheet resistance for films prepared in different working pressure decreases with the Argon pressure but increased after the optimal pressure of 60mTorr.